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參數(shù)資料
| 型號(hào)： | BSP120 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 65K |
| 代理商： | BSP120 |
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP120
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
designed for use as a line current
interrupter in telephone sets and for
application in relay, high-speed and
line-transformer drivers.
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown
QUICK REFERENCE DATA
PINNING - SOT223
Marking code
BSP120
Drain-source voltage
Drain-current (DC)
Drain-source ON-resistance
I
D
= 250 mA; V
GS
= 10 V
V
DS
I
D
max.
max.
200 V
250 mA
typ.
max.
7
12
R
DS(on)
Gate threshold voltage
V
GS(th)
max.
2.8 V
1
2
3
4
= gate
= drain
= source
= drain
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
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| BSP16T3 | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | SOT-223 |
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| BSP1201.20M | 制造商:TE Connectivity 功能描述:CGPT Polyolefin Heatshrink 1.2mm Black |
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| BSP120T/R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 250MA I(D) | SOT-223 |
| BSP121 | 制造商:NXP Semiconductors 功能描述: |
| BSP121T/R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 300MA I(D) | SOT-223 |
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