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參數(shù)資料
| 型號： | BSP108 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BSP108 |
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP108
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1.
Device mounted on an epoxy printed-circuit board 40 mm
×
40 mm
×
1.5 mm; mounting pad for the collector lead
min. 6 cm
2
.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
amb
= 25
°
C (note 1)
Storage temperature range
Junction temperature
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
65 to + 150
°
C
max.
80 V
20 V
500 mA
1.0 A
1.5 W
150
°
C
From junction to ambient (note 1)
R
th j-a
=
83.3 K/W
Drain-source breakdown voltage
I
D
= 10
μ
A; V
GS
= 0
Gate threshold voltage
I
D
= 1 mA; V
GS
= V
DS
V
(BR) DSS
min.
80 V
min.
max.
1.5
3.5
V
V
V
GS (th)
Gate-source leakage current
±
V
GS
= 20 V; V
DS
= 0
Drain-source leakage current
V
DS
= 60 V; V
GS
= 0
Drain-source ON-resistance
I
D
= 500 mA; V
GS
= 10 V
I
GSS
max.
100 nA
I
DSS
max.
1.0
μ
A
typ.
max.
2.0
3.0
R
DS(on)
Transfer admittance
I
D
= 500 mA; V
DS
= 15 V
min.
typ.
150
300
mS
mS
Y
fs
Input capacitance at f = 1 MHz;
typ.
max.
45
60
pF
pF
V
DS
= 10 V; V
GS
= 0
C
iss
Output capacitance at f = 1 MHz;
V
DS
= 10 V; V
GS
= 0
typ.
max.
30
45
pF
pF
C
oss
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