參數(shù)資料
型號: BSP108
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel enhancement mode vertical D-MOS transistor
中文描述: 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 2/12頁
文件大小: 64K
代理商: BSP108
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP108
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
intended for use in relay, high-speed
and line-transformer drivers.
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown
PINNING - SOT223
Marking code
BSP108
1
2
3
4
= gate
= drain
= source
= drain
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to T
amb
= 25
°
C
Drain-source ON-resistance
V
DS
±
V
GSO
I
D
P
tot
max.
max.
max.
max.
80 V
20 V
500 mA
1.5 W
typ.
max.
2.0
3.0
I
D
= 500 mA; V
GS
= 10 V
R
DS(on)
Transfer admittance
I
D
= 500 mA; V
DS
= 15 V
min.
typ.
150
300
mS
mS
Y
fs
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
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