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參數(shù)資料
| 型號： | BSP107 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 65K |
| 代理商： | BSP107 |
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP107
Fig.6
Typical on-resistance as a function of drain
current; T
j
= 25
°
C.
handbook, halfpage
RDSon
(
)
10
1
MDA702
10
ID (mA)
10
2
10
3
14
18
22
26
VGS = 3 V
4 V
5 V
10 V
Fig.7
Typical capacitances as a function of
drain-source voltage; V
GS
= 0; f = 1 MHz;
T
j
= 25
°
C
handbook, halfpage
0
40
VDS (V)
C
(pF)
20
0
10
20
30
MDA703
Crss
Ciss
Coss
Fig.8
Temperature coefficient of drain-source on
resistance;
R
at T
R
DS(on)
at 25
°
C
typical R
DS(on)
at 150 mA/10 V;
k
--------------------------------------------
;
=
(1) I
D
= 150 mA; V
GS
= 10 V;
(2) I
D
= 20 mA; V
GS
= 2.6 V
handbook, half age
50
0
50
150
2.8
0.4
2.4
2
100
1.6
1.2
0.8
MDA704
k
Tj (
°
C)
(1)
(2)
Fig.9
Temperature coefficient of gate-source
threshold voltage;
V
at T
GS(th)
C
typical V
GS(th)
at 1 mA.
k
----------------------------------------
;
=
handbook, halfpage
50
0
50
k
Tj (
°
C)
150
0.7
1.1
100
1
0.9
0.8
MDA705
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