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參數(shù)資料
| 型號： | BSO301SN |
| 英文描述： | High Voltage Fast Recovery Rectifier Diodes |
| 中文描述： | ？的OptiMOS小信號MOSFET。 30V的。 SO - 8封裝。導(dǎo)通狀態(tài)\u003d 7.8mOhm。 13A條。當(dāng)?shù)毓蛦T？ |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 217K |
| 代理商： | BSO301SN |
2001-08-21
Page 8
Preliminary data
BSO301SN
Published by
Infineon Technologies AG
,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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| BSP090 | P-channel enhancement mode vertical D-MOS transistor |
| BSP106 | INDUCTOR TOROID W/HDR 75UH 15% |
| BSP107 | N-channel enhancement mode vertical D-MOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSO301SP | 功能描述:MOSFET P-CH -30 V -14.9 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSO301SP H | 功能描述:MOSFET P-KANAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSO301SPH | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS-P Power-Transistor |
| BSO301SPHXT | 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 12.6A 8DSO |
| BSO301SPHXUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 12.6A 8-Pin DSO Dry 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 12.6A 8DSO |
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