參數(shù)資料
型號: BSO301SN
英文描述: High Voltage Fast Recovery Rectifier Diodes
中文描述: ?的OptiMOS小信號MOSFET。 30V的。 SO - 8封裝。導通狀態(tài)\u003d 7.8mOhm。 13A條。當?shù)毓蛦T?
文件頁數(shù): 2/8頁
文件大?。?/td> 217K
代理商: BSO301SN
2001-08-21
Page 2
Preliminary data
BSO301SN
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
-
-
-
K/W
SMD version, device on PCB:
@ min. footprint; t 10 sec.
@ 6 cm
2
cooling area
1)
; t 10 sec.
-
-
-
-
110
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=80μA
Zero gate voltage drain current
V
(BR)DSS
30
-
-
V
V
GS(th)
1.2
1.6
2
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=125°C
Gate-source leakage current
I
DSS
-
-
0.01
10
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=4.5V,
I
D
=11A
Drain-source on-state resistance
R
DS(on)
-
9.3
10.9
m
V
GS
=10V,
I
D
=13A
R
DS(on)
-
6.7
7.8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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