參數(shù)資料
型號: BSC034N03LSCG
廠商: INFINEON TECHNOLOGIES AG
元件分類: JFETs
英文描述: 22 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, PLASTIC, TDSON-8
文件頁數(shù): 4/10頁
文件大小: 380K
代理商: BSC034N03LSCG
BSC034N03LS G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C iss
-
3200
4300
pF
Output capacitance
C oss
-
1000
1300
Reverse transfer capacitance
Crss
-62-
Turn-on delay time
t d(on)
-
6.9
-
ns
Rise time
t r
-
4.8
-
Turn-off delay time
t d(off)
-28-
Fall time
t f
-
4.6
-
Gate Charge Characteristics
5)
Gate to source charge
Q gs
-
9.0
-
nC
Gate charge at threshold
Q g(th)
-
4.8
-
Gate to drain charge
Q gd
-
4.3
-
Switching charge
Q sw
-
8.5
-
Gate charge total
Q g
-
18.8
25
Gate plateau voltage
V plateau
-
3.0
-
V
Gate charge total
Q g
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-39
52
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
16.3
-
nC
Output charge
Q oss
V DD=15 V, V GS=0 V
-27-
Reverse Diode
Diode continuous forward current
I S
-
57
A
Diode pulse current
I S,pulse
-
400
Diode forward voltage
V SD
V GS=0 V, I F=30 A,
T j=25 °C
-
0.83
-
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/s
-
10
nC
5) See figure 16 for gate charge parameter definition
4) See figure 13 for more detailed information
T C=25 °C
Values
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Rev. 1.1
page 3
2009-09-03
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相關代理商/技術參數(shù)
參數(shù)描述
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