參數(shù)資料
型號(hào): BS208
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: P-channel enhancement mode vertical D-MOS transistor
中文描述: 200 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 64K
代理商: BS208
April 1995
5
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BS208
Fig.5 Typical output characteristics; T
j
= 25
°
C.
handbook, halfpage
(A)
0
25
0
0.2
0.4
0.6
0.8
5
10
15
20
MDA706
VDS (V)
VGS =
10 V
4 V
3 V
6 V
5 V
Fig.6
Typical transfer characteristics;
V
DS
=
10 V; T
j
= 25
°
C.
handbook, halfpage
(A)
0
10
0
0.2
0.4
0.6
0.8
2
4
6
8
MDA707
VGS (V)
Fig.7
Typical on-resistance as a function of drain
current; T
j
= 25
°
C.
handbook, halfpage
28
8
12
ID
(mA)
RDSon (
)
16
20
24
3
10
2
10
MDA708
VGS =
10 V
5 V
4 V
Fig.8
Typical capacitances as a function of
drain-source voltage; V
GS
= 0; f = 1 MHz;
T
j
= 25
°
C.
handbook, halfpage
C
(pF)
0
120
80
40
0
5
10
25
20
15
MDA709
VDS (V)
Crss
Ciss
Coss
相關(guān)PDF資料
PDF描述
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