參數(shù)資料
型號: BQ4845P
英文描述: Fast Recovery Glass Passivated Rectifier Diodes
中文描述: 實時時鐘
文件頁數(shù): 3/20頁
文件大?。?/td> 1155K
代理商: BQ4845P
Pin Descriptions
Crystal inputs
X1–X2
X1–X2
32.768kHZ, 6pF crystal.
are
a
direct
connection
for
a
R ST
R eset output
RST goes low whenever V
CC
falls below the
power fail threshold. RST will remain low for
200ms typical after V
CC
crosses the threshold
on power-up. RST also goes low whenever a
watchdog timeout occurs.
drain output.
RST is an open-
INT
Interrupt output
INT goes low when a power fail, periodic, or
alarm condition occurs. INT is an open-drain
output.
WDI
Watchdog input
WDI is a three-level input. If WDI remains
either high or low for longer than the
watchdog time-out period (1.5 seconds de-
fault), WDO goes low. WDO remains low
until the next transition at WDI. Leaving
WDI unconnected disables the watchdog
function. WDI connects to an internal volt-
age divider between V
OUT
and V
SS
, which
sets it to mid-supply when left uncon-
nected.
WDO
Watchdog output
WDO goes low if WDI remains either high
or low longer than the watchdog time-out
period. WDO returns high on the next tran-
sition at WDI. WDO remains high if WDI is
unconnected.
A
0
–A
3
Clock address inputs
A
0
–A
3
allow access to the 16 bytes of real-
time clock and control registers.
DQ
0
–DQ
7
Data input and output
DQ
0
–DQ
7
provide x8 data for real-time clock
information. These pins connect to the mem-
ory data bus.
V
SS
Ground
CS
Chip select
OE
Output enable
OE provides the read control for the RTC
memory locations.
CE
OUT
Chip enable output
CE
OUT
goes low only when CE
IN
is low and
V
CC
is above the power fail threshold. If
CE
IN
is low, and power fail occurs, CE
OUT
stays low for 100
μ
s or until CE
IN
goes high,
whichever occurs first.
CE
IN
Chip enable input
CE
IN
is the input to the chip-enable gating
circuit.
BC
Backup battery input
BC should be connected to a 3V backup
cell. A voltage within the V
BC
range on the
BC pin should be present upon power up to
provide proper oscillator start-up.
V
OUT
Output supply voltage
V
OUT
provides the higher of V
CC
or V
BC
,
switched internally, to supply
RAM.
external
WE
Write enable
WE provides the write control for the RTC
memory locations.
V
CC
Input supply voltage
+5V input
3
Aug. 1995
bq4845/bq4845Y
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