參數(shù)資料
型號: BQ4845P
英文描述: Fast Recovery Glass Passivated Rectifier Diodes
中文描述: 實時時鐘
文件頁數(shù): 16/20頁
文件大小: 1155K
代理商: BQ4845P
16
Power-Down/Power-Up Timing
(TA= TOPR)
Symbol
t
F
Parameter
Minimum
300
Typical
-
Maximum
-
Unit
μ
s
Conditions
V
CC
slew from 4.75 to
4.25V
V
CC
slew from 4.25 to V
SO
V
CC
slew from V
SO
to
V
PFD(MAX)
Interrupt delay from
V
PFD
t
FS
10
-
-
μ
s
t
R
100
-
-
μ
s
t
PF
6
-
24
μ
s
t
WPT
Write-protect timefor
external RAM
90
100
125
μ
s
Delay after V
CC
slews down past
V
PFD
beforeSRAM is write-protected
and RST activated.
Internal write-protection period af-
ter V
CC
passes V
PFD
on power-up.
Reset active time-out period
Time during which external SRAM
is write-protected after V
CC
passes
V
PFD
on power-up.
t
CSR
CS at V
IH
after power-up
100
200
300
ms
t
RST
V
PFD
to RST inactive
t
CSR
-
t
CSR
ms
t
CER
Chip enable recovery
time
Chip enable propagation
delay to external SRAM
t
CSR
-
t
CSR
ms
t
CED
-
9
12
ns
Output load A
Caution:
Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode
may affect data integrity.
Aug. 1995
Power-Down/Power-Up Timing
Notes:
PWRIE set to “1” to enable power fail interrupt.
RST and INT are open drain and require an external pull-up resistor.
bq4845/bq4845Y
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