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參數(shù)資料
| 型號： | BLW83 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 79K |
| 代理商： | BLW83 |
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
Fig.11 Intermodulation distortion as a function of
output power.
(1)
handbook, halfpage
0
20
40
40
50
30
MGP595
d3, d5
(dB)
d3
d5
P.E.P. (W)
Th =
90
°
C
70
°
C
50
°
C
25
°
C
Th =
90
°
C
70
°
C
50
°
C
25
°
C
V
CE
= 28 V; I
= 25 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; typical values
Fig.12 Double-tone efficiency and power gain as a
function of output power.
V
CE
= 28 V; I
= 25 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values
handbook, halfpage
0
20
40
20
0
40
30
10
0
20
MGP596
η
dt
(%)
Gp
(dB)
Gp
η
dt
P.E.P. (W)
Figs 13 and 14 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
Fig.13 Power gain as a function of frequency.
handbook, halfpage
Gp
(dB)
MGP597
30
20
10
0
1
10
10
2
f (MHz)
V
CE
= 28 V; I
C(ZS)
= 25 mA; P
L
= 30 W; T
h
= 25
°
C; Z
L
= 9,5
Ruggedness in s.s.b. operation
The BLW83 is capable of withstanding a load mismatch
(VSWR = 50) under the following conditions:
f
1
= 28,000 MHz; f
2
= 28,001 MHz; V
CE
= 28 V; T
h
= 70
°
C
and P
Lnom
= 35 W (P.E.P.).
Fig.14 Input impedance (series components) as a
function of frequency.
handbook, halfpage
ri
(
)
0
MGP598
1
10
10
2
10
15
5
ri
12.5
7.5
5
10
2.5
xi
(
)
f (MHz)
xi
V
CE
= 28 V; I
C(ZS)
= 25 mA; P
L
= 30 W; T
h
= 25
°
C; Z
L
= 9,5
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