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參數(shù)資料
| 型號： | BLW83 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BLW83 |
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
List of components in Fig.8:
C1
C3
C4
C5
C6
C7
C9
C10 =
C12 =
L1
L2
L4
L5
R1
R2
R3
R4
R5
R6
R7
R8
R9
=
=
=
=
=
=
=
C2 = 10 to 780 pF film dielectric trimmer
22 nF ceramic capacitor (63 V)
47
μ
F/10 V electrolytic capacitor
56 pF ceramic capacitor (500 V)
47
μ
F/35 V electrolytic capacitor
C8 = 220 nF polyester capacitor
10
μ
F/35 V electrolytic capacitor
C11 = 7 to 100 pF film dielectric trimmer
82 pF ceramic capacitor (500 V)
3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2
×
5 mm
L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
600
; parallel connection of 2
×
1,2 k
carbon resistors (
±
5%; 0,5 W each)
15
carbon resistor (
±
5%; 0,25 W)
1,2
; parallel connection of 4
×
4,7
carbon resistors (
±
5%; 0,125 W each)
33
carbon resistor (
±
5%; 0,25 W)
18
carbon resistor (
±
5%; 0,25 W)
120
wirewound resistor (
±
5%; 5,5 W)
1
carbon resistor (
±
5%; 0,125 W)
47
wirewound potentiometer (3 W)
1,57
; parallel connection of 3
×
4,7
wirewound resistors ( 5%; 5,5 W each)
=
=
=
=
=
=
=
=
=
=
=
=
=
Fig.9
Intermodulation distortion as a function of output power.
Typical values; V
CE
= 26 V; —— T
h
= 70
°
C;
T
h
= 25
°
C.
handbook, halfpage
0
5
10
15
60
40
MGP593
d3
(dB)
P.E.P. (W)
IC = 0.8 A 1 A
1.35 A
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| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
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