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參數(shù)資料
| 型號(hào)： | BLW83 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 79K |
| 代理商： | BLW83 |
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Note
1.
Measured under pulse conditions: t
p
≤
200
μ
s;
δ ≤
0,02.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 10 mA
Collector-emitter breakdown voltage
open base; I
C
= 50 mA
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 1,25 A; V
CE
= 5 V
D.C. current gain ratio of matched devices
(1)
I
C
= 1,25 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 3,75 A; I
B
= 0,75 A
Transition frequency at f = 100 MHz
(1)
I
E
= 1,25 A; V
CB
= 28 V
I
E
= 3,75 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 28 V
Collector-flange capacitance
V
(BR)CES
>
65 V
V
(BR)CEO
>
36 V
V
(BR)EBO
>
4 V
I
CES
<
4 mA
E
SBO
E
SBR
>
>
typ.
8 mJ
8 mJ
50
h
FE
10 to 100
h
FE1
/h
FE2
<
1,2
V
CEsat
typ.
1,5 V
f
T
f
T
typ.
typ.
530 MHz
530 MHz
C
c
typ.
50 pF
C
re
C
cf
typ.
typ.
31 pF
2 pF
Fig.4 Typical values; V
CE
= 28 V.
handbook, halfpage
0
1
2
1
0
2
MGP588
IC
(A)
VBE (V)
Th = 70
°
C
25
°
C
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