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參數(shù)資料
| 型號： | BLW50F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor(HF/VHF功率 晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLW50F |
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
Fig.11 Intermodulation distortion as a function of
output power
(1)
.
handbook, halfpage
0
25
50
75
40
30
MGP475
d3, d5
(dB)
d3
P.E.P. (W)
d5
V
CE
= 50 V; I
= 50 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values.
Fig.12 Double-tone efficiency and power gain as a
function of output power.
handbook, halfpage
0
25
50
75
0
25
MGP476
20
0
10
Gp
(dB)
P.E.P. (W)
η
dt
η
dt
(%)
Gp
V
CE
= 50 V; I
= 50 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values.
Ruggedness in s.s.b. operation
The BLW50F is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 45 W (P.E.P.) under
the following conditions:
V
CE
= 50 V; f
1
= 28,000 MHz; f
2
= 28,001 MHz; T
h
= 70
°
C;
R
th mb-h
= 0,3 K/W.
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