參數(shù)資料
型號(hào): BLW50F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor(HF/VHF功率 晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 3/12頁
文件大?。?/td> 75K
代理商: BLW50F
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
D.C. and r.f. (f
>
1 MHz) power dissipation; T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
tot
; P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
110 V
55 V
4 V
2,5 A
7,5 A
94 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP466
1
10
1
1
10
10
2
VCE (V)
IC
(A)
Tmb = 25
°
C
Th = 70
°
C
I Continuous d.c. and r.f. operation
II Short-time operation during mismatch
Fig.3 Power derating curves vs. temperature.
handbook, halfpage
0
100
50
0
100
MGP467
50
Th (
°
C)
Prf
(W)
ΙΙ
Ι
THERMAL RESISTANCE
(dissipation = 54 W; T
mb
= 86
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base
(d.c. and r.f. dissipation)
From mounting base to heatsink
R
th j-mb
R
th mb-h
=
=
2,1 K/W
0,3 K/W
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