參數(shù)資料
型號(hào): BLW50F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor(HF/VHF功率 晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 75K
代理商: BLW50F
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
class-A, AB and B operated, industrial
and military transmitters in the h.f.
and v.h.f. band. Resistance
stabilization provides protection
against device damage at severe load
mismatch conditions. Matched
h
FE
groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance
Note
1.
At 65W P.E.P.
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
η
dt
%
I
C
A
I
C(ZS)
mA
50
d
3
dB
40
T
h
°
C
70
25
s.s.b. (class-A)
s.s.b. (class-AB)
45
50
1,6 - 28
1,6 - 28
0 - 16 (P.E.P.)
10 - 65 (P.E.P.)
>
typ. 18
19,5
1,2
<
typ.
30
typ. 45
(1)
1,45
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
PINNING - SOT123
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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