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參數(shù)資料
| 型號： | BLV93 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BLV93 |
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV93
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation
at T
mb
= 67
°
C
at T
mb
= 67
°
C; f
>
1 MHz
Storage temperature
Operating junction temperature
V
CBOM
V
CEO
V
EBO
max.
max.
max.
36 V
16 V
3 V
I
C
; I
C AV
I
CM
max.
max.
1,6 A
4,8 A
P
tot(dc)
P
tot(rf)
T
stg
T
j
max.
max.
65 to
+
150
°
C
max.
18 W
24 W
200
°
C
Fig.2 D.C. SOAR.
R
th mb-h
= 0,4 K/W
handbook, halfpage
1
10
1
MDA422
1
10
VCE (V)
IC
(A)
10
2
Th = 60
°
C
Fig.3 Power/temperature derating curves.
I
II Continuous operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz)
Continuous operation
handbook, halfpage
(W)
0
II
I
50
100
Th (
°
C)
200
0
32
150
24
16
8
MDA423
III
THERMAL RESISTANCE
Dissipation = 12 W; T
mb
= 112
°
C
From junction to mounting base
(d.c. dissipation)
(r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
max.
max.
max.
7,0 K/W
5,2 K/W
0,4 K/W
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