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參數(shù)資料
| 型號： | BLV93 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 63K |
| 代理商： | BLV93 |
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV93
DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended
for use in mobile radio transmitters in the 900 MHz
communications band.
FEATURES
multi-base structure and emitter-ballasting resistors for
an optimum temperature profile
internal input matching to achieve an optimum wideband
capability and high power gain
gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance at T
h
= 25
°
C in a common-emitter class-B test circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
η
C
%
narrow band; c.w.
12,5
9,6
900
900
8
6
>
typ.
6,5
6,0
>
typ.
50
59
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
b
c
e
e
emitter
emitter
base
collector
emitter
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
1
2
3
4
5
6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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