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參數(shù)資料
| 型號： | BLV920 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 109K |
| 代理商： | BLV920 |
1997 Nov 17
9
Philips Semiconductors
Product specification
UHF power transistor
BLV920
Fig.10 Input impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V; I
CQ
= 50 mA; P
L
= 20 W;
T
h
= 25
°
C; R
th mb-h
= 0.4 K/W.
handbook, halfpage
(
)
820
860
900
0
8
MLC675
940
980
6
4
2
f (MHz)
xi
ri
Fig.11 Load impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V; I
CQ
= 50 mA; P
L
= 20 W;
T
h
= 25
°
C; R
th mb-h
= 0.4 K/W.
handbook, halfpage
(
)
820
860
900
940
0
4
MLC676
980
3
2
1
f (MHz)
RL
XL
Fig.12 Power gain as a function of frequency;
typical values.
V
CE
= 26 V; I
CQ
= 50 mA; P
L
= 20 W;
T
h
= 25
°
C; R
th mb-h
= 0.4 K/W.
handbook, halfpage
820
860
900
940
0
MLC677
980
8
4
G
f (MHz)
p
(dB)
Fig.13 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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