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參數(shù)資料
| 型號(hào)： | BLV920 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | BLV920 |
1997 Nov 17
5
Philips Semiconductors
Product specification
UHF power transistor
BLV920
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter, class-AB test circuit; R
th mb-h
= 0.4 K/W.
Ruggedness in class-AB operation
The BLV920 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: V
CE
= 26 V; f = 960 MHz; I
CQ
= 50 mA; T
h
= 25
°
C; R
th mb-h
= 0.4 K/W.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
10
η
C
(%)
≥
55
CW, class-AB
960
26
50
20
Fig.6
Power gain and efficiency as functions of
load power; typical values.
V
CE
= 26 V.
I
CQ
= 50 mA.
f = 960 MHz.
handbook, halfpage
Gp
(dB)
0
10
20
30
0
MLC673
8
PL
80
40
60
20
0
4
12
η
(%)
η
Gp
V
CE
= 26 V.
I
CQ
= 50 mA.
f = 960 MHz.
Fig.7
Load power as a function of input power;
typical values.
handbook, halfpage
0
1
2
4
3
10
0
20
MLC674
PL
(W)
Pi
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