參數(shù)資料
型號(hào): BLV920
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor(UHF 功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁(yè)數(shù): 2/12頁(yè)
文件大小: 109K
代理商: BLV920
1997 Nov 17
2
Philips Semiconductors
Product specification
UHF power transistor
BLV920
FEATURES
Internal input matching to achieve high power gain and
easy design of wideband circuits
Emitter ballasting resistors for an optimum temperature
profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Base station transmitters in the 820 to 960 MHz range.
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171A flange envelope with a
ceramic cap. All leads are isolated from the flange.
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
b
c
e
e
emitter
emitter
base
collector
emitter
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
1
2
3
4
5
6
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
10
η
C
(%)
55
CW, class-AB
960
26
20
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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