參數(shù)資料
型號(hào): BLV904
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor(UHF功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409B, 8 PIN
文件頁(yè)數(shù): 5/16頁(yè)
文件大?。?/td> 131K
代理商: BLV904
1997 Jul 15
5
Philips Semiconductors
Product specification
UHF power transistor
BLV904
APPLICATION INFORMATION
RF performance at T
mb
= 25
°
C in a common emitter test circuit.
Ruggedness in class-AB operation
The BLV904 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the
following conditions: f = 960 MHz; V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 5 W; T
mb
= 25
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
13
typ. 15.5
typ. 15.5
η
C
(%)
50
typ. 55
typ. 40
d
im
(dBc)
CW, class-AB
960
26
15
5
2-tone, class-AB
f
1
= 960; f
2
= 960.1
26
15
5 (PEP)
typ.
30
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
CW, class-AB; V
CE
= 26 V; I
CQ
= 15 mA; f = 960 MHz; T
mb
= 25
°
C.
handbook, halfpage
(dB)
0
2
PL (W)
4
8
20
40
60
80
100
η
C
0
0
16
6
12
8
4
Gp
η
C
MGD938
(%)
Fig.7
Load power as a function of drive power;
typical values.
CW, class-AB; V
CE
= 26 V; I
CQ
= 15 mA; f = 960 MHz; T
mb
= 25
°
C.
handbook, halfpage
PL
(W)
0
0.1
0.2
0.3
6
2
0
4
PD (W)
MGD939
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