參數(shù)資料
型號(hào): BLV904
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor(UHF功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409B, 8 PIN
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 131K
代理商: BLV904
1997 Jul 15
4
Philips Semiconductors
Product specification
UHF power transistor
BLV904
THERMAL CHARACTERISTICS
Note
1.
Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering
recommendations in the General part of handbook SC19a”
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
P
tot
= 17 W; T
mb
= 25
°
C; note 1
10
K/W
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
6
2.5
MAX.
1.3
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 5 mA
open base; I
C
= 10 mA
open collector; I
E
= 0.5 mA
V
CE
= 26 V; V
BE
= 0
V
CE
= 26 V; I
C
= 600 mA
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 26 V; I
C
= 0; f = 1 MHz
60
28
4
30
V
V
V
mA
pF
pF
Fig.4
DC current gain as a function of collector
current; typical values.
(1) V
CE
= 26 V; t
p
= 500
μ
s;
δ
= < 1 %.
(2) V
CE
= 10 V.
handbook, halfpage
0
80
40
hFE
IC (A)
0
(1)
(2)
0.4
0.8
1.6
1.2
MGD936
Fig.5
Capacitance as a function of
collector-emitter voltage; typical values.
f = 1 MHz.
handbook, halfpage
C
(pF)
0
Cc
Cre
50
0
10
20
30
40
VCE (V)
10
20
30
40
MGD937
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