參數(shù)資料
型號: BLV904
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor(UHF功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409B, 8 PIN
文件頁數(shù): 10/16頁
文件大小: 131K
代理商: BLV904
1997 Jul 15
10
Philips Semiconductors
Product specification
UHF power transistor
BLV904
Fig.14 Input impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 5 W; T
mb
= 25
°
C.
handbook, halfpage
800
850
900
1000
3
f (MHz)
Zi
(
)
1
xi
ri
0
2
950
MGD944
Fig.15 Load impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 5 W; T
mb
= 25
°
C.
handbook, halfpage
800
16
8
XL
f (MHz)
ZL
(
)
0
850
900
1000
950
MGD945
RL
Fig.16 Power gain as a function of frequency;
typical values.
V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 5 W; T
mb
= 25
°
C.
handbook, halfpage
(dB)
800
850
900
1000
0
16
950
12
8
4
f (MHz)
MGD946
MOUNTING RECOMMENDATIONS
Heat from the device is transferred via the leads and the
metallized underside. For optimum heat transfer it is
recommended that the transistor be mounted on a
grounded metallized area on the component side of the
printed-circuit board. This metallized area should contain a
large number of metallized, solder-filled through-holes.
The non-component side of the printed-circuit board forms
a ground plane. When the printed-circuit board is mounted
on the heatsink using heatsink compound, a thermal
resistance from mounting base to heatsink of 0.9 K/W can
be attained.
Fig.17 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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