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參數(shù)資料
| 型號(hào)： | BLV57 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-161A, 8 PIN |
| 文件頁(yè)數(shù)： | 6/24頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | BLV57 |
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1998 Feb 09
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
CHARACTERISTICS apply to either transistor section unless otherwise specified
T
j
= 25
°
C
Notes
1.
2.
Measured under pulse conditions: t
p
≤
300
μ
s;
δ ≤
0,02.
Measured under pulse conditions: t
p
≤
50
μ
s;
δ ≤
0,01.
The graphs apply to either transistor section.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 10 mA
open base; I
C
= 25 mA
Emitter-base breakdown voltage
open collector; I
E
= 5 mA
Collector cut-off current
V
BE
= 0; V
CE
= 27 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 0,85 A; V
CE
= 25 V
V
(BR)CES
V
(BR)CEO
50 V
27 V
V
(BR)EBO
3,5 V
I
CES
10 mA
E
SBO
E
SBR
2 mJ
2 mJ
typ.
15
40
h
FE
D.C. current gain ratio of transistor sections
I
C
= 0,85 A; V
CE
= 25 V
Collector-emitter saturation voltage
(1)
I
C
= 1,7 A; I
B
= 0,17 A
Transition frequency at f = 100 MHz
(2)
I
E
= 0,85 A; V
CB
= 25 V
I
E
= 1,7 A; V
CB
= 25 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 25 V
0,67 to 1,5
V
CEsat
typ.
0,75 V
f
T
f
T
typ.
typ.
2,5 GHz
2,5 GHz
typ.
24
30
pF
pF
C
c
Feedback capacitance at f = 1 MHz
I
C
= 50 mA; V
CE
= 25 V
Collector-flange capacitance
C
re
C
cf
typ.
typ.
15 pF
2 pF
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