參數資料
型號: BLV57
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-161A, 8 PIN
文件頁數: 13/24頁
文件大?。?/td> 152K
代理商: BLV57
1998 Feb 09
13
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
Conditions for Figs 11and 12:
Typical values; V
CE
= 25 V; I
C
= 2
×
0,85 A;
T
h
= 25
°
C;
T
h
= 70
°
C; f
vision
= 860 MHz.
Ruggedness in push-pull class-A operation
The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following
conditions:
Notes
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
70 dB.
Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (d
cm
) is the voltage variation (%) of sound carrier when vision carrier is switched from 0
dB to
20 dB.
2.
V
CE
= 25 V; I
C
= 2
×
0,85 A; T
h
= 70
°
C; P
o sync(1)
12,5 W; f = 860 MHz; R
th mb-h
= 0,25 K/W.
At any other composition of the output signal: P
L
(r.m.s. value)
5 W.
Fig.13 Input impedance (series components).
handbook, halfpage
400
650
900
2
0
4
MGP369
f (MHz)
xi
ri
ri, xi
(
)
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