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參數(shù)資料
| 型號(hào)： | BLV57 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-161A, 8 PIN |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 152K |
| 代理商： | BLV57 |
1998 Feb 09
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
THERMAL RESISTANCE
(dissipation = 42 W; T
mb
= 80,5
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j
mb(dc)
R
th j
mb(rf)
R
th mb
h
=
=
=
2,43
1,91
0,25
K/W
K/W
K/W
Fig.3 Power derating curves vs. temperature.
(1)
I Continuous d.c. (including r.f. class-A) operation
II Continuous r.f. operation
Dissipation of either transistor section should not exceed half rated dissipation.
handbook, halfpage
Ptot
(W)
0
50
Th (
°
C)
100
75
25
0
50
MGP359
ΙΙ
Ι
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