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參數(shù)資料
| 型號： | BLT82 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLT82 |
1996 Feb 05
9
Philips Semiconductors
Product specification
UHF power transistor
BLT82
Fig.7
Input impedance as a function of frequency
(series components); typical values.
V
CE
= 6 V; I
CQ
= 2 mA; P
L
= 3.5 W; T
amb
= 25
°
C.
handbook, halfpage
(
)
800
850
1000
0
8
ri
xi
MGD212
900
950
6
4
2
f (MHz)
Fig.8
Load impedance as a function of frequency
(series components); typical values.
V
CE
= 6 V; I
CQ
= 2 mA; P
L
= 3.5 W; T
amb
= 25
°
C.
handbook, halfpage
ZL
(
)
800
850
900
1000
4
MGD213
950
2
0
2
f (MHz)
XL
RL
Fig.9
Power gain as a function of
frequency; typical values.
V
CE
= 6 V; I
CQ
= 2 mA; P
L
= 3.5 W; T
amb
= 25
°
C.
handbook, halfpage
Gp
(dB)
800
850
900
1000
0
4
8
MGD214
950
f (MHz)
Fig.10 SO8, RF test print and definition of
transistor impedance.
Dimensions in mm.
handbook, halfpage
Zi
Zi
ZL
ZS
23.4
ZL
MGD215
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