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參數資料
| 型號： | BLT82 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLT82 |
1996 Feb 05
4
Philips Semiconductors
Product specification
UHF power transistor
BLT82
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
tot
= 1.9 W; T
s
= 115
°
C; note 1
32
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
0.1
150
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage open base; I
C
= 10 mA
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 5 mA
20
10
3.5
30
17
10
V
V
V
mA
open collector; I
E
= 1 mA
V
CE
= 6 V; V
BE
= 0
V
CE
= 5 V; I
C
= 100 mA
V
CB
= 6 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 6 V; I
C
= 0; f = 1 MHz
pF
pF
Fig.3 Normalized thermal resistance as a function of pulse time.
handbook, full pagewidth
MGD208
Rth j-s
(K/W)
10
1
10
2
10
5
10
4
10
3
10
2
10
1
1
tp (s)
tp
tp
T
T
P
t
δ
=
0.50
0.33
0.20
0.10
0.02
0.01
0.00
0.05
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