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參數(shù)資料
| 型號： | BLT82 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLT82 |
1996 Feb 05
5
Philips Semiconductors
Product specification
UHF power transistor
BLT82
APPLICATION INFORMATION
RF performance at T
s
≤
60
°
C in a common emitter test circuit (see notes 1, 2 and Fig.5).
Notes
1.
2.
T
s
is the temperature at the soldering point of the collector pin.
See also application report:. “G.S.M. Power Amplifier for 900 MHz at 6 V (no.: RNR-T45-95-T-246)”
Ruggedness in class-AB operation
The BLT82 is capable of withstanding load mismatches corresponding to:
VSWR = 6 : 1 through all phases under the following conditions:
δ
= 1 : 8; t
p
≤
5 ms; f = 900 MHz;
V
CE
= 8.3 V; P
L
= 4 W.
VSWR = 10 : 1 through all phases under the following conditions:
δ
= 1 : 8; t
p
≤
5 ms; f = 900 MHz;
V
CE
= 8.6 V; P
L
= 2.8 W.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
8
typ. 10
≥
9
η
C
(%)
≥
50
typ. 65
≥
57
Pulsed, class-AB;
δ
= 1 : 8; t
p
≤
5 ms
900
6
2
3.5
2.8
Fig.4
Power gain and collector efficiency as
functions of load power; typical values.
Pulsed, class-AB; f = 900 MHz; I
CQ
= 2 mA; tuned at P
L
= 3.5 W;
T
s
≤
60
°
C.
handbook, halfpage
Gp
(dB)
0
6
0
MGD209
4
8
12
2
4
PL (W)
80
η
C
(%)
60
20
40
0
Gp
η
C
VCE =5 V
6 V
6 V
5 V
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