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參數(shù)資料
| 型號(hào)： | BLT53 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122D, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BLT53 |
May 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLT53
APPLICATION INFORMATION
RF performance at T
mb
= 25
°
C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
c
(%)
c.w. class-B
470
7.5
8
>
6
typ. 6.8
>
60
typ. 65
Fig.7
Gain and efficiency as functions of load
power, typical values.
Class-B operation; V
CE
= 7.5 V; f = 470 MHz.
handbook, halfpage
(dB)
0
4
8
Gp
PL (W)
12
0
2
MCD197
8
6
4
η
(%)
η
70
20
30
60
50
40
Fig.8
Load power as a function of drive power,
typical values.
Class-B operation; V
CE
= 7.5 V; f = 470 MHz.
handbook, halfpage
0
8
4
0
1
2
PL
(W)
4
MCD198
3
PD (W)
Ruggedness in class-B operation
The BLT53 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, and
f = 470 MHz.
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