參數(shù)資料
型號(hào): BLT53
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122D, 4 PIN
文件頁數(shù): 3/11頁
文件大?。?/td> 72K
代理商: BLT53
May 1991
3
Philips Semiconductors
Product specification
UHF power transistor
BLT53
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
, I
C(AV)
I
CM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
open emitter
open base
open collector
DC or average value
peak value
f
>
1 MHz
RF operation;
T
mb
= 25
°
C
20
10
3
2.5
7.5
V
V
V
A
A
P
tot
total power dissipation
35.5
W
T
stg
T
j
storage temperature range
junction operating temperature
65
150
200
°
C
°
C
Fig.2 DC SOAR.
handbook, halfpage
10
2
MCD192
10
VCE (V)
IC
(A)
1
10
1
1
Tmb = 25
o
C
70
o
C
Fig.3 Power derating curve.
(1) Continuous DC operation.
(2) Continuous RF operation (f
>
1 MHz).
(3) Short time operation during mismatch (f
>
1 MHz).
handbook, halfpage
(W)
0
40
80
Tmb (
o
C)
160
0
MCD193
120
40
30
20
10
(1)
(3)
(2)
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb(RF)
from junction to mounting base
P
tot
= 35.5 W;
T
mb
= 25
°
C
4.9
K/W
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