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參數(shù)資料
| 型號(hào)： | BLF2048 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF push-pull power LDMOS transistor(UHF 推挽式功率LDMOS晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 239K |
| 代理商： | BLF2048 |
2000 May 24
2
Philips Semiconductors
Preliminary specification
UHF push-pull power LDMOS transistor
BLF2048
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.
DESCRIPTION
Push-pull silicon N-channel enhancement mode lateral
D-MOS transistor encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT539A
PIN
DESCRIPTION
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source connected to flange
5
1
2
4
3
Top view
MBK880
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
2-tone, class-AB
f
1
= 2200; f
2
= 2200.1
26
28
120 (PEP)
140 (PEP)
>10
>30
typ. 31
≤
25
typ.
25
typ. 11.2
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
65
±
15
18
+
150
200
V
V
A
°
C
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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| BLF2324M8LS200PJ | 功能描述:RF Mosfet LDMOS (Dual), Common Source 28V 1.74A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539B 制造商:ampleon usa inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 晶體管類(lèi)型:LDMOS（雙），共源 頻率:2.3GHz ~ 2.4GHz 增益:17.2dB 電壓 - 測(cè)試:28V 額定電流:- 噪聲系數(shù):- 電流 - 測(cè)試:1.74A 功率 - 輸出:60W 電壓 - 額定:65V 封裝/外殼:SOT539B 供應(yīng)商器件封裝:SOT539B 標(biāo)準(zhǔn)包裝:100 |
| BLF2324M8LS200PU | 功能描述:RF Mosfet LDMOS (Dual), Common Source 28V 1.74A 2.3GHz ~ 2.4GHz 17.2dB 60W SOT539B 制造商:ampleon usa inc. 系列:- 包裝:托盤(pán) 零件狀態(tài):在售 晶體管類(lèi)型:LDMOS（雙），共源 頻率:2.3GHz ~ 2.4GHz 增益:17.2dB 電壓 - 測(cè)試:28V 額定電流:- 噪聲系數(shù):- 電流 - 測(cè)試:1.74A 功率 - 輸出:60W 電壓 - 額定:65V 封裝/外殼:SOT539B 供應(yīng)商器件封裝:SOT539B 標(biāo)準(zhǔn)包裝:20 |
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