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參數(shù)資料
| 型號(hào)： | BLF2047L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor(UHF 功率 LDMOS晶體管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-502A, 2 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | BLF2047L |
1999 Dec 06
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
THERMAL CHARACTERISTICS
Note
1.
Determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-h
= 1.15 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 26 V; I
DQ
= 350 mA; P
L
= 65 W; f = 2000 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to
heatsink
T
h
= 25
°
C, P
tot
= 152 W, note 1
1.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
4
0.17
3.4
MAX.
3.5
10
250
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
V
GS
= 0; I
D
= 1.4 mA
V
DS
= 10 V; I
D
= 140 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GS th
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 5 A
V
GS
= V
GS th
+ 9 V; I
D
= 5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
1.5
18
V
V
μ
A
A
nA
S
pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
Two-tone, class-AB
f
1
= 2000; f
2
= 2000.1
26
350
65 (PEP)
>10.5
>30
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