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參數(shù)資料
| 型號(hào)： | BLF2047L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor(UHF 功率 LDMOS晶體管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-502A, 2 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BLF2047L |
1999 Dec 06
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (1.8 to 2 GHz)
Internal input and output matching for high gain and
efficiency.
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
Two-tone, class-AB
f
1
= 2000; f
2
= 2000.1
26
65 (PEP)
>10.5
>30
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
65
65
±
15
9
+
150
200
V
V
A
°
C
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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