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參數(shù)資料
| 型號(hào)： | BLF2047 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor(UHF 功率 LDMOS晶體管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-502A, 2 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | BLF2047 |
1999 Dec 02
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-h
= 1.15 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; I
DQ
= 400 mA; P
L
= 65 W (CW); f = 2200 MHz.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
typ.
29
Two-tone, class-AB
f
1
= 2200; f
2
= 2200.1
26
28
400
400
65 (PEP)
65 (PEP)
>10
>30
typ. 31
typ. 12.6
handbook, halfpage
0
20
40
80
5
MGS914
60
PL (PEP) (W)
10
50
0
40
30
20
10
Gp
(dB)
Gp
η
D
(%)
η
D
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical values.
V
DS
= 26 V; I
= 400 mA; T
≤
25
°
C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
handbook, halfpage
0
20
40
80
5
MGS913
60
PL (PEP) (W)
10
50
0
40
30
20
10
Gp
(dB)
Gp
η
D
(%)
η
D
Fig.3
Power gain and drain efficiency as functions
of peak envelope load power; typical values.
V
DS
= 26 V; I
= 400 mA; T
≤
25
°
C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
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