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參數(shù)資料
| 型號(hào)： | BLC6G20LS-110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, SOT-896-1, 2 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BLC6G20LS-110 |
BLC6G20-110_6G20LS-110_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
Philips Semiconductors
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLC6G20-110 and BLC6G20LS-110 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 950 mA; P
L
= 110 W (CW); f = 1990 MHz.
Table 5:
Symbol
R
th(j-case)
thermal resistance
from junction to case
Thermal characteristics
Parameter
Conditions
T
case
= 80
°
C;
P
L
= 25 W
Type
BLC6G20-110
BLC6G20LS-110
Min
<tbd> <tbd> <tbd>
K/W
<tbd>
0.45
Typ
Max
Unit
0.54
K/W
Table 6:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
Min
65
Typ
-
Max
-
Unit
V
V
DS
= 10 V; I
D
= 150 mA
V
DS
= 28 V; I
D
= 950 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
<tbd>
2
<tbd> <tbd> <tbd>
V
-
-
23
27
<tbd>
V
5
-
μ
A
A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
-
-
-
-
10.5
0.1
450
-
0.125
nA
S
C
rs
-
<tbd>
-
pF
Table 7:
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 1932.5 MHz; f
2
= 1942.5 MHz; f
3
= 1977.5 MHz; f
4
= 1987.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 950 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol
Parameter
P
L(AV)
average output power
G
p
power gain
η
D
drain efficiency
IMD3
third order intermodulation distortion
ACPR
adjacent channel power ratio
Application information
Conditions
Min
-
-
-
-
-
Typ
25
18
32
37
40
Max
-
-
-
-
-
Unit
W
dB
%
dBc
dBc
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
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