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參數(shù)資料
| 型號： | BLC6G20LS-75 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT896-1, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 52K |
| 代理商： | BLC6G20LS-75 |
1.
Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
1.2 Features
I
Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an I
Dq
of 550 mA:
N
Output power = 29.5 W (AV)
N
Gain = 19 dB
N
Efficiency = 38.5 %
N
ACPR
400
=
62.5 dBc
N
ACPR
600
=
72 dBc
N
EVM
rms
= 1.5 %
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
Table 1:
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
f
V
DS
(MHz)
(V)
CW
1930 to 1990
28
GSM EDGE
1930 to 1990
28
Typical performance
P
L(AV)
(W)
63
29.5
G
p
(dB)
19
19
η
D
(%)
52
38.5
ACPR
400
ACPR
600
EVM
rms
(dBc)
(dBc)
-
-
62.5
72
(%)
-
1.5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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