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參數(shù)資料
| 型號： | BLC6G20LS-110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, SOT-896-1, 2 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BLC6G20LS-110 |
BLC6G20-110_6G20LS-110_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
2 of 9
Philips Semiconductors
BLC6G20-110; BLC6G20LS-110
UHF power LDMOS transistor
1.3 Applications
I
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
2.
Pinning information
[1]
Connected to flange
3.
Ordering information
4.
Limiting values
Table 2:
Pin
BLC6G20-110 (SOT895-1)
1
2
3
Pinning
Description
Simplified outline
Symbol
drain
gate
source
[1]
BLC6G20LS-110 (SOT896-1)
1
2
3
drain
gate
source
[1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3:
Type number
Ordering information
Package
Name
-
Description
plastic flanged cavity package; 2 mounting slots; 2 leads
plastic earless flanged cavity package; 2 leads
Version
SOT895-1
SOT896-1
BLC6G20-110
BLC6G20LS-110 -
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage
V
GS
gate-source voltage
I
D
drain current
T
stg
storage temperature
T
j
junction temperature
Limiting values
Conditions
Min
-
0.5
-
65
-
Max
65
+13
<tbd>
+150
225
Unit
V
V
A
°
C
°
C
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