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參數(shù)資料
| 型號(hào)： | BGY925 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module(UHF放大器模塊) |
| 中文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT365A, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | BGY925 |
2000 Feb 02
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
handbook, halfpage
800
900
f (MHz)
Gp
(dB)
1000
1100
25
20
30
MCD834
Fig.6
Small signal in band power gain as a
function of frequency; typical values.
Z
S
= Z
L
= 50
; P
D
=
30 dBm; V
S1
= V
S2
= 26 V; T
mb
= 25
°
C.
handbook, halfpage
Losses
(dB)
800
900
f (MHz)
1000
1100
20
4
8
12
16
MCD835
Fig.7
Small signal in band input return losses as
a function of frequency; typical values.
Z
S
= Z
L
= 50
; P
D
=
30 dBm; V
S1
= V
S2
= 26 V; T
mb
= 25
°
C.
handbook, halfpage
(dB)
0
f (MHz)
500
1500
20
80
60
40
20
0
1000
MCD836
Fig.8
Small signal out band power gain as a
function of frequency; typical values.
Z
S
= Z
L
= 50
; V
S1
= V
S2
= 26 V; P
D
=
30 dBm; T
mb
= 25
°
C.
handbook, halfpage
(dB)
0
10
(1)
(4)
(5)
PL (W)
20
40
24
32
30
30
28
26
MCD837
(7)
(6)
(3)
(2)
Fig.9
Power gain as a function of load power;
typical values
Z
S
= Z
L
= 50
; V
S1
= V
S2
= 26 V; T
mb
= 25
°
C.
(1) T
amb
=
33
°
C.
(2) T
amb
=
20
°
C.
(3) T
amb
= 3
°
C.
(4) T
amb
= 25
°
C.
(5) T
amb
= 50
°
C.
(6) T
amb
= 75
°
C.
(7) T
amb
= 100
°
C.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BGY925,127 | 制造商:NXP Semiconductors 功能描述: |
| BGY925/5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Amplifier |
| BGY925/5,127 | 功能描述:射頻放大器 RAIL TNS-RFPR RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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| BGYD806K | 制造商:PCTEL 功能描述:ANTENNA UNIT |
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