參數(shù)資料
型號(hào): BGY925
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 衰減器
英文描述: UHF amplifier module(UHF放大器模塊)
中文描述: 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT365A, 4 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大小: 88K
代理商: BGY925
2000 Feb 02
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
L
= 23 W; V
S1
= V
S2
= 26 V; T
mb
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
I
S1
I
S2
P
L
G
p
frequency range
supply current
supply current
load power
power gain
920
23
28
28
30
50
500
30
30
960
34
32
35
40
2:1
60
MHz
mA
mA
W
dB
dB
%
dBc
dBc
P
D
<
60 dBm
160 mW
P
L
< 2 W
2 W
P
L
23 W
P
L
= 16 W
P
L
= 16 W
P
L
= 16 W
η
H
2
H
3
VSWR
in
efficiency
second harmonic
third harmonic
input VSWR
stability
VSWR
3 : 1 through all phases;
V
S2
= 26 to 27 V; P
L
= 23 W
P
carrier
= 16 W; P
interference
= 1.6
μ
W;
f
i
= f
c
±
600 kHz
P
carrier
= 16 W; P
interference
= 1.6 mW;
f
i
= f
c
+ 270 kHz
dBc
reverse intermodulation
80
dBc
direct intermodulation
55
dBc
NF
B
noise figure
AM bandwidth
8
dBc
MHz
corner frequency = 3 dB;
P
carrier
= 16 W; modulation = 20%
VSWR
5 : 1 through all phases;
V
S2
= 26 V; P
L
= 23 W
2
ruggedness
no degradation
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