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參數(shù)資料
| 型號(hào)： | BGY288 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN |
| 文件頁數(shù)： | 2/22頁 |
| 文件大?。?/td> | 140K |
| 代理商： | BGY288 |
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
2 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
2.
Pinning information
2.1 Pinning
2.2 Pin description
[1]
Pins 2, 3, 11 and 12 (V
BAT
) are not internally connected and must all be connected to the battery supply
voltage.
Fig 1.
Pin configuration
Transparent top view
P
V
S
B
R
G
R
001aac028
V
BAT
V
BAT
RFI_LB
n.c.
GND
V
BAT
V
BAT
RFI_HB
TXON
GND
1
2
3
4
5
12
11
10
9
13
16
15
14
6
7
8
Table 1:
Symbol
GND
V
BAT
[1]
Pin description
Pin
1, 13, 15
2, 3
11, 12
4
5
6
7
8
Type
ground
supply
supply
analog input
logic input
analog input
supply
logic input
Description
ground
battery supply voltage for DCS1800/PCS1900 section
battery supply voltage for GSM850/EGSM900 section
DCS1800/PCS1900 transmit RF input
RF power control enable input
RF power control input
stabilized supply voltage
Low-Band (LB) (GSM850/EGSM900) or High-Band
(HB) (DCS1800/PCS1900) select input
not connected
GSM850/EGSM900 transmit RF input
GSM850/EGSM900 transmit RF output
DCS1800/PCS1900 transmit RF output
ground
RFI_HB
TXON
PC
V
STAB
BAND
n.c.
RFI_LB
RFO_LB
RFO_HB
9
10
14
16
inner pads
analog input
analog output
analog output
ground
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