參數(shù)資料
型號： BGY288
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900
中文描述： 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN
文件頁數(shù)： 10/22頁
文件大?。?/td> 140K
代理商： BGY288
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
10 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
[1]
Condition to set V
PC
: V
BAT
= 3.6 V;
δ
= 2 : 8; P
D(LB)
= 2 dBm; T
mb
= 25
°
C; f = 897.5 MHz for EGSM900; f = 836.5 MHz for GSM850.
Conditions for power variation: P
D(LB)
= 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;
T
mb
= 15
°
C to 70
°
C; V
BAT
= 3.2 V to 4.2 V; V
STAB
= 2.8 V
±
20 mV.
Conditions for power variation: P
D(LB)
= 0 dBm to 4 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;
T
mb
=
20
°
C to +90
°
C; V
BAT
= 3.2 V to 4.2 V; V
STAB
= 2.8 V
±
20 mV.
Conditions for power variation: P
D(LB)
= 2 dBm; f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900;
T
mb
= 25
°
C; V
BAT
= 3.6 V; V
STAB
= 2.8 V
±
20 mV.
[2]
[3]
[4]
P
n
noise power
RBW = 100 kHz;
f
0
= 897.5 MHz for EGSM900;
f
0
= 836.5 MHz for GSM850
f
0
+ 27.5 MHz; P
L(LB)
< 34 dBm
f
0
+ 37.5 MHz; P
L(LB)
< 34 dBm
f
≥
1805 MHz; P
L(LB)
< 34 dBm
f
0
= 915 MHz for EGSM900;
f
0
= 849 MHz for GSM850;
P
L(LB)
= 6 dBm to 34 dBm;
f
SS1
= f
0
20 MHz; P
SS1
=
40 dBm;
CG = P
L(CON)
P
SS1
; see
Figure 4
f
0
= 915 MHz for EGSM900;
f
0
= 849 MHz for GSM850;
P
L(LB)
= 6 dBm to 34 dBm;
f
SS2
= f
0
+ 20 MHz; P
SS2
=
40 dBm;
SSG = P
L(SS2)
P
SS2
; see
Figure 4
P
L(LB)
= 6 dBm to 34 dBm;
6.5 % AM modulation with
f
mod
= 67 kHz at RFI_LB
f
mod
= 140 kHz at RFI_LB
f
mod
= 271 kHz at RFI_LB
P
D(LB)
= 1.5 dBm to 2.5 dBm;
P
L(LB)
= 6 dBm to 34 dBm
P
L(LB)
= 6 dBm to 34 dBm
P
L(LB)
= 5 dBm to 34 dBm or
34 dBm to 5 dBm
-
-
-
-
-
-
-
-
73
82
77
28
dBm
dBm
dBm
dB
CG
conversion gain
SSG
small signal gain
-
-
31
dB
AM/AM
AM/AM conversion
-
-
-
-
5
8
14
2
8
13
20
4
%
%
%
deg/dB
AM/PM
AM/PM conversion
maximum control slope
carrier rise and fall time
-
-
-
-
200
2
dB/V
μ
s
t
r
, t
f
f
CL
control loop bandwidth
stability
-
-
200
-
-
36
kHz
dBm
P
L(LB)
≤
34 dBm; VSWR
≤
7 : 1 through all
phases; V
BAT
= 3.2 V to 4.6 V
V
BAT
= 3.2 V to 4.6 V; P
L(LB)
≤
34 dBm;
δ
= 4 : 8; VSWR
≤
8 : 1 through all phases
ruggedness
no degradation
Table 7:
Z
S
= Z
L
= 50
; V
BAT
= 3.6 V; V
STAB
= 2.8 V; T
mb
= 25
°
C;
δ
= 1 : 8 to 4 : 8; t
p
= 575
μ
s to 2300
μ
s; P
D(LB)
= 2 dBm; spurious
signals on P
D(LB)
<
50 dBm; LB TX mode selected;
f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.
Symbol
Parameter
Conditions
Dynamic characteristics GSM850 and EGSM900 transmit mode
…continued
Min
Typ
Max
Unit
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