參數(shù)資料
型號: BGY288
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN
文件頁數(shù): 13/22頁
文件大?。?/td> 140K
代理商: BGY288
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
13 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
a. Conversion gain (CG)
b. Small signal gain (SSG)
The total noise at the output of the power amplifier is the summation of three sources:
The noise present at the input of the power amplifier at f
SS1
amplified by the conversion gain.
The noise present at the input of the power amplifier at f
SS2
amplified by the small signal gain.
The noise generated by the power amplifier itself, when the noise at the input of the power
amplifier is zero.
Fig 4.
Input and output signals
001aaa701
P
f
P
SS1
f
SS1
f
0
P
D
P
f
P
L(SS1)
P
L(CON)
f
SS1
f
0
2f
0
f
SS1
P
L
POWER
AMP
CG = P
L(CON)
P
SS1
001aaa702
P
f
P
D
f
0
f
SS2
P
SS2
P
f
P
L(SS2)
f
0
f
SS2
P
L
POWER
AMP
SSG = P
L(SS2)
P
SS2
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