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參數(shù)資料
| 型號： | BGY282 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | dual band UHF amplifier module for GSM900 and GSM1800 |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SOT-632A, 12 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 386K |
| 代理商： | BGY282 |
2001 Dec 04
5
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
P
n
noise power GSM900
P
L1
≤
34 dBm; bandwidth = 100 kHz;
f = 925 MHz
P
L1
≤
34 dBm; bandwidth = 100 kHz;
f = 935 MHz
P
L2
≤
32 dBm; bandwidth = 100 kHz;
f = 1805 MHz
P
D1,2
=
0.5 to 0.5 dBm;
P
L1
= 5 to 34 dBm; P
L2
= 0 to 32 dBm;
P
L1,2
= constant during measurement
P
D1,2
= 4 %; f = 100 kHz;
P
L1
= 5 to 34.7 dBm;
P
L2
= 0 to 32.3 dBm
P
D1
= 0 dBm @ 915 MHz;
P
L1
= 34 dBm;
P
i1
=
50 dBm @ 905 MHz;
CG = P
925
P
i1
P
D2
= 0 dBm @ 1785 MHz;
P
L2
= 32 dBm;
P
i2
=
50 dBm @ 1765 MHz;
CG = P
1805
P
i2
P
L1
= 5 to 34 dBm; P
L2
= 0 to 32 dBm
71
dBm
80
dBm
noise power GSM1800
76
dBm
AM/PM conversion
6
deg/dB
AM/AM conversion
30
%
CG
conversion gain GSM900
25
dB
CG
conversion gain GSM1800
25
dB
3 dB control bandwidth
GSM900, GSM1800
power drop 4 slot burst
GSM900, GSM1800
0.5
MHz
V
APC
= 2.2 V; difference P
L
with
δ
= 1 : 8 and
δ
= 4 : 8
V
S1,2
= 5 V; P
D1
= 0 to 3 dBm;
P
D2
= 0 to 5 dBm; P
L1
= <35 dBm;
P
L2
= <33 dBm; VSWR
≤
6 : 1 through
all phases
V
S1,2
= 4.2 V; P
D1
= 0 to 3 dBm;
P
D2
= 0 to 5 dBm; P
L1
= <35 dBm;
P
L2
= <33 dBm; VSWR
≤
10 : 1
through all phases
V
S1,2
= 4.2 V; P
D1
= 0 to 3 dBm;
P
D2
= 0 to 5 dBm P
L1
= <34 dBm;
P
L2
= <32 dBm; VSWR
≤
6 : 1 through
all phases;
δ
= 4 : 8
0.4
dB
ruggedness
no degradation
no degradation
no degradation
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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