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參數(shù)資料
| 型號(hào)： | BGY282 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | dual band UHF amplifier module for GSM900 and GSM1800 |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CERAMIC, WITH PLASTIC CAP, SOT-632A, 12 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 386K |
| 代理商： | BGY282 |
2001 Dec 04
4
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D1,2
= 0 dBm; V
S1
= V
S2
= 3.5 V; V
APC
≤
2.2 V; T
mb
= 25
°
C; t
p
= 575
μ
s;
δ
= 1 : 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
2
35
34.5
33
32.3
50
45
MAX.
UNIT
V
band
band switch voltage
GSM1800 selected
GSM900 selected
0
1.7
3
3
34.7
34.2
32.3
31.7
43
38
0.7
5.5
30
10
2
4
5
38
35
3 : 1
V
V
μ
A
μ
A
mA
dBm
dBm
dBm
dBm
dBm
dBm
%
%
dBc
dBc
I
band
I
L
I
CM1
, I
CM2
P
D1
P
D2
band switch current
leakage current
peak control current
input drive power (GSM900)
input drive power (GSM1800)
V
APC
= 0.2 V; P
D1,2
= 0 mW
P
L1
load power GSM900
V
APC
= 2.2 V
V
APC
= 2.2 V; V
S1
= 3.1 V
V
APC
= 2.2 V
V
APC
= 2.2 V; V
S1
= 3.1 V
V
APC
= 2 V
V
APC
= 2 V
P
L1
= 34.7 dBm
P
L2
= 32.3 dBm
V
S1,2
= 3.1 to 4.4 V; P
D1,2
= 0 dBm;
P
L1
= 5 to 34.7 dBm;
P
L2
= 0 to 32.3 dBm
V
S1,2
= 3.1 to 5.15 V; V
APC
≤
0.5 V
P
L2
load power GSM1800
η
1
η
2
efficiency GSM900
efficiency GSM1800
harmonics GSM900
harmonics GSM1800
H
2
, H
3
VSWR
in
input VSWR of active device
input VSWR of inactive
device
8 : 1
stability
V
S1,2
= 3 to 5 V; P
D1
= 0 to 3 dBm;
P
D2
= 0 to 5 dBm; P
L1
= <35 dBm;
P
L2
= <33 dBm; VSWR = 6 : 1 through
all phases
V
S1,2
= 3.1 to 4.2 V; P
D1
= 0 to 3 dBm;
P
D2
= 0 to 5 dBm; P
L1
= <34 dBm;
P
L2
= <32 dBm; VSWR = 6 : 1 through
all phases;
δ
= 4 : 8
V
APC
= 0.5 V; P
D1
= 3 dBm;
P
D2
= 5 dBm
P
L1
= 34.7 dBm
60
dBc
60
dBc
isolation
36
dBm
second harmonic isolation
from GSM900 into GSM1800
maximum control slope
carrier rise time
20
dBm
5 dBm < P
L1,2
< P
L max
P
L1
= 5 to 34 dBm; P
L2
= 0 to 32 dBm;
time to settle within
0.5 dB of final P
L
P
L1
= 5 to 34 dBm; P
L2
= 0 to 32 dBm;
time to settle within
0.5 dB of final P
L
120
1.5
200
2
dB/V
μ
s
t
r
t
f
carrier fall time
1.5
2
μ
s
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