參數(shù)資料
型號(hào): BGY282
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: dual band UHF amplifier module for GSM900 and GSM1800
中文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: CERAMIC, WITH PLASTIC CAP, SOT-632A, 12 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 386K
代理商: BGY282
2001 Dec 04
3
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Note: P
L
is forward power, measured in a coupler.
CONDITIONS
MIN.
40
30
MAX.
UNIT
V
S1
, V
S2
DC supply voltage
V
APC
= 0; RF
IN
= off
V
APC
> 0.5 V; RF
IN
= on
7
5.5
3
10
36
35
35
34
7.5
4.5
+100
+90
V
V
V
dBm
dBm
dBm
dBm
dBm
W
W
°
C
°
C
V
APC
P
D1
, P
D2
P
L1
P
L1
P
L2
P
L2
P
S1
P
S2
T
stg
T
mb
DC control voltage
input drive power
load power 1 (GSM900)
load power 1 (GSM900)
load power 2 (GSM1800)
load power 2 (GSM1800)
total power from supply during pulse (GSM900)
total power from supply during pulse (GSM1800)
storage temperature
operating mounting base temperature
δ
= 4 : 8; VSWR
out
> 2 : 1
δ
= 4 : 8; VSWR
out
> 2 : 1
δ
= 4 : 8
δ
= 4 : 8
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