參數(shù)資料
型號: BGY119C
英文描述: RF Amplifier
中文描述: 射頻放大器
文件頁數(shù): 8/15頁
文件大小: 159K
代理商: BGY119C
1996 May 13
8
Philips Semiconductors
Product specification
UHF amplifier modules
BGY115A; BGY115B;
BGY115C/P; BGY115D
Fig.16 Load power as a function of control voltage;
BGY115C/P, typical values.
Z
S
= Z
L
= 50
;
P
D
= 2 mW; V
S
= 6 V; T
mb
= 25
°
C.
0
5
2
0
MBD604
1
1
2
3
4
915 MHz
890 MHz
PL
(W)
VC (V)
Fig.17 Efficiency as a function of load power;
BGY115C/P, typical values.
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
S
= 6 V; T
mb
= 25
°
C.
0
0.4
2
60
20
0
40
MBD605
0.8
1.2
1.6
η
(%)
915 MHz
890 MHz
PL (W)
Fig.18 Load power as a function of frequency;
BGY115C/P, typical values.
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
C
= 3.5 V; T
mb
= 25
°
C.
handbook, halfpage
860
880
900
940
0
1
MBD606
920
f (MHz)
VS = 6 V
PL
(W)
5.2 V
Fig.19 Load power as a function of mounting base
temperature; BGY115C/P, typical values.
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
S
= 6 V; V
C
= 3.5 V.
40
0
40
120
0
1
2
MBD607
80
915 MHz
890 MHz
PL
(W)
Tmb (
o
C)
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