參數資料
型號: BGY119C
英文描述: RF Amplifier
中文描述: 射頻放大器
文件頁數: 6/15頁
文件大?。?/td> 159K
代理商: BGY119C
1996 May 13
6
Philips Semiconductors
Product specification
UHF amplifier modules
BGY115A; BGY115B;
BGY115C/P; BGY115D
Fig.9
Load power as a function of control voltage;
BGY115B, typical values.
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
S
= 6 V; T
mb
= 25
°
C.
handbook, halfpage
(W)
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
VC
MSA909
872 MHz
905 MHz
Fig.10 Efficiency as a function of load power;
BGY115B, typical values.
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
S
= 6 V; T
mb
= 25
°
C.
handbook, halfpage
η
(%)
60
40
20
0
1.6
1.2
0.8
0.4
0
PL
MSA900
872 MHz
905 MHz
Fig.11 Load power as a function of frequency;
BGY115B, typical values.
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
C
= 3.5 V; T
mb
= 25
°
C.
handbook, halfpage
(W)
0
850
0.4
0.8
1.2
1.6
f (MHz)
870
890
910
MSA904
VS
VS
Fig.12 Load power as a function of mounting base
temperature; BGY115B, typical values.
handbook, halfpage
(W)
1.6
1.2
0.8
0.4
0
40
0
40
80
120
Tmb( C)
MSA907
Z
S
= Z
L
= 50
; P
D
= 2 mW; V
S
= 6 V; V
C
= 3.5 V; f = 890 MHz.
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