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參數(shù)資料
| 型號(hào)： | BFS386L6 |
| 英文描述： | ?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz? |
| 中文描述： | ？NPN硅雙混合型射頻晶體管TSLP - 6 VCO模塊封裝到4GHz的理想？ |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | BFS386L6 |
Feb-28-2002
3
BFS386L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0 , TR1
I
C
= 1 mA,
I
B
= 0 , TR2
Collector -base cutoff current
V
CB
= 5 V,
I
E
= 0 , TR1
V
CB
= 5 ,
I
E
= 0 , TR1
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0 , TR1
V
EB
= 1 V,
I
C
= 0 , TR2
DC current gain-
I
C
= 15 mA,
V
CE
= 3 V, TR1
I
C
= 40 mA,
V
CE
= 3 V, TR2
V
(BR)CEO
6
6
9
9
-
-
V
I
CBO
-
-
-
-
100
100
nA
I
EBO
-
-
-
-
1
1
μA
h
FE
60
60
100
100
200
200
-
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz,
TR1
I
C
= 40 mA,
V
CE
= 3 V,
f
= 1 GHz,
TR2
f
T
-
-
14
14
-
-
GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz, emitter grounded, TR1
V
CB
= 5 V,
f
= 1 MHz, emitter grounded, TR2
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz, base grounded, TR1
V
CE
= 5 V,
f
= 1 MHz, base grounded, TR2
C
cb
-
-
0.3
0.5
-
-
pF
C
ce
-
-
0.15
0.2
-
-
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded, TR1
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded, TR2
C
eb
-
-
0.45
1
-
-
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